STB200N4F3 datasheet(3/14 Pages) STMICROELECTRONICS

部件名	STB200N4F3

功能描述	N-channel 40V - 0.0035Ω - 120A - D2PAK - TO-220 planar STripFET™Power MOSFET

PDF	14 Pages

Scroll/Zoom	100%

制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

标志

3 / 14 page

STB200N4F3 - STP200N4F3

Electrical ratings

3/14

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate-source voltage

±20

(1)

Current limited by package

Drain current (continuous) at TC = 25°C

120

(1)

Drain current (continuous) at TC = 100°C

120

IDM

(2)

Pulse width limited by safe operating area

Drain current (pulsed)

480

PTOT

Total dissipation at TC = 25°C

300

Derating factor

2.0

W/°C

EAS

(3)

Starting Tj = 25°C, ID = 60A, VDD= 25V

Single pulse avalanche energy

862

dv/dt(4)

ISD ≤60A, di/dt ≤440 A/µs, VDD ≤V(BR)DSS, Tj ≤TJMAX.

Peak diode recovery voltage slope

4.2

V/ns

Tstg

Operating junction temperature

Storage temperature

-55 to 175

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220

D²PAK

Rthj-case

Thermal resistance junction-case max

0.50

°C/W

Rthj-pcb (1)

When mounted on FR-4 board, 1inch² 2 oz. Cu.

Thermal resistance junction-pcb max

°C/W

Rthj-amb

Thermal resistance junction-ambient max

62.5

°C/W

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