SMP75-8 datasheet(3/8 Pages) STMICROELECTRONICS

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SMP75-8

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Table 4: Thermal Resistances

Table 5: Electrical Characteristics (Tamb = 25°C)

Symbol

Parameter

Value

Unit

Rth(j-a)

Junction to ambient (with recommended footprint)

100

°C/W

Rth(j-l)

Junction to leads

°C/W

Symbol

Parameter

VRM

Stand-off voltage

VBR

Breakdown voltage

VBO

Breakover voltage

IRM

Leakage current

IPP

Peak pulse current

IBO

Breakover current

Holding current

Continuous reverse voltage

Leakage current at VR

Capacitance

Types

IRM @ VRM

IR @ VR

Dynamic

VBO

Static

VBO @ IBO

max.

typ.

max.

note1

note 2

note 3

note 4

note 5

µAVµAV

SMP75-8

800

Note 1: IR measured at VR guarantee VBR min

≥ VR

Note 2: see functional test circuit 1

Note 3: see test circuit 2

Note 4: see functional holding current test circuit 3

Note 5: VR = 2V bias, VRMS=1V, F=1MHz

Figure 2: Pulse waveform

Figure 3: Non repetitive surge peak on-state

current versus overload duration

100

Repetitive peak pulse current

tr = rise time (µs)

tp = pulse duration time (µs)

(A)

TSM

1E-2

1E-1

1E+0

1E+1

1E+2

1E+3

F=50Hz

Tj initial = 25°C

t(s)

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