SMP75-8

4/8

Figure 4: On-state voltage versus on-state

current (typical values)

Figure 5: Relative variation of holding current

versus junction temperature

Figure 6: Relative variation of breakover

voltage versus junction temperature

Figure 7: Relative variation of leakage current

versus reverse voltage applied (typical values)

Figure 8: Variation of thermal impedance

junction to ambient versus pulse duration

(Printed

circuit

board

FR4,

SCu=35µm,

recommended pad layout)

Figure

9:

Relative

variation

of

junction

capacitance versus reverse voltage applied

(typical values)

I (A)

T

10

100

01

2345

678

Tj=25°C

V (V)

T

I [Tj] / I [Tj=25°C]

HH

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

-40 -30 -20 -10

0

10

20

30

40

50

60

70

80

90 100 110 120 130

Tj(°C)

V

[Tj] / V

[Tj=25°C]

BO

BO

0.94

0.95

0.96

0.97

0.98

0.99

1.00

1.01

1.02

1.03

1.04

1.05

1.06

1.07

1.08

-40 -30 -20 -10

0

10

20

30

40

50

60

70

80

90 100 110 120 130

Tj(°C)

1

10

100

1000

10000

25

50

75

100

125

I [Tj] / I [Tj=25°C]

RR

Tj(°C)

Z/R

th(j-a)

th(j-a)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-02

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

tp(s)

C [V ] / C [V =2V]

RR

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1

10

V (V)

R

F =1MHz

V= 1V

Tj = 25°C

OSC

RMS