0.01 GHz to 10 GHz, MMIC, GaAs, pHEMT

RF Gain Block

Enhanced Product

HMC788A-EP

Rev. B

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FEATURES

Gain: 14 dB typical

Operational frequency range: 0.01 GHz to 10 GHz

Input/output internally matched to 50 Ω

High input linearity

1 dB compression (P1dB): 20 dBm typical

Output third-order intercept (OIP3): 33 dBm typical

Supply voltage: 5 V typical

2 mm × 2 mm, 6-lead lead frame chip scale package

ENHANCED PRODUCT FEATURES

Supports defense and aerospace applications

(AQEC standard)

Extended industrial temperature range: −55°C to +105°C

Controlled manufacturing baseline

One assembly/test site

1 fabrication site

Enhanced product change notification

Qualification data available on request

APPLICATIONS

Cellular, 3G, LTE, WiMAX, and 4G

LO driver applications

Microwave radio

Test and measurement equipment

Ultra wideband (UWB) communications

FUNCTIONAL BLOCK DIAGRAM

2

1

3

6

5

4

GND

RFIN

NIC

NIC

RFOUT

PACKAGE

BASE

HMC788A-EP

NIC

Figure 1.

GENERAL DESCRIPTION

The HMC788A-EP is a 0.01 GHz to 10 GHz, gain block,

monolithic microwave integrated circuit (MMIC) amplifier

using gallium arsenide (GaAs) and pseudomorphic high

electron mobility transistor (pHEMT) technology.

This 2 mm × 2 mm LFCSP amplifier can be used as either a

cascadable 50 Ω gain stage, or to drive the local oscillator (LO)

port of many of the single and double balanced mixers from

Analog Devices, Inc. with up to 20 dBm output power.

The HMC788A-EP offers 14 dB of gain and an OIP3 of 33 dBm

while requiring only 76 mA from a 5 V supply.

The Darlington feedback pair exhibits reduced sensitivity to

normal process variations and yields excellent gain stability over

temperature while requiring a minimal number of external bias

components.

Additional application and technical information can be found

in the HMC788A data sheet.