M58LW032D datasheet(13/50 Pages) STMICROELECTRONICS

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M58LW032D

READ MODES

Read operations in the M58LW032D are asyn-

chronous. The device outputs the data corre-

sponding to the address latched, that is the

memory array, Status Register, Common Flash In-

terface, Electronic Signature or Block Protection

Status depending on the command issued.

During read operations, if the bus is inactive for a

time equivalent to tAVQV, the device automatically

enters Auto Low Power mode. In this mode the in-

ternal supply current is reduced to the Auto Low

Power supply current, IDD5. The Data Inputs/Out-

puts will still output data if a Bus Read operation is

in progress.

Read operations can be performed in two different

ways, Random Read (where each Bus Read oper-

ation accesses a different Page) and Page Read.

In Page Read mode a Page of data is internally

read and stored in a Page Buffer. Each memory

page is a 4 Words or 8 Bytes and has the same

A3-A21. In x8 mode only A0, A1 and A2 may

change, in x16 mode only A1 and A2 may change.

The first read operation within the Page has the

normal access time (tAVQV), subsequent reads

within the same Page have much shorter access

times (tAVQV1). If the Page changes then the nor-

mal, longer timings apply again.

See Figure 10., Page Read AC Waveforms, and

Table 16., Page Read AC Characteristics, for de-

tails on when the outputs become valid.

M58LW032D 数据表(PDF) 13 Page - STMicroelectronics