ST13007

HIGH VOLTAGE FAST-SWITCHING

NPN POWER TRANSISTOR

s

IMPROVED SPECIFICATION:

- LOWER LEAKAGE CURRENT

- TIGHTER GAIN RANGE

- DC CURRENT GAIN PRESELECTION

- TIGHTER STORAGE TIME RANGE

s

HIGH VOLTAGE CAPABILITY

s

NPN TRANSISTOR

s

LOW SPREAD OF DYNAMIC PARAMETERS

s

MINIMUM LOT-TO-LOT SPREAD FOR

RELIABLE OPERATION

s

VERY HIGH SWITCHING SPEED

s

FULLY CHARACTERIZED AT 125

s

LARGE RBSOA

APPLICATIONS

s

ELECTRONIC BALLASTS FOR

FLUORESCENT LIGHTING

s

SWITCH MODE POWER SUPPLIES

DESCRIPTION

The device is manufactured using high voltage

Multi

Epitaxial

Planar

technology

for

high

switching speeds and high voltage capability.

They use a Cellular Emitter structure to enhance

switching speeds.

INTERNAL SCHEMATIC DIAGRAM

July 1998

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

700

V

400

V

9

V

Collector Current

8

A

Collector Peak Current

16

A

Base Current

4

A

Base Peak Current

8

A

80

W

Storage Temperature

-65 to 150

Max. O perat ing Junction Temperature

150

1

2

3

TO-220

®

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