ST13007 datasheet(2/6 Pages) STMICROELECTRONICS

2 / 6 page

THERMAL DATA

Rthj-ca se

Thermal Resistance Junction-case

Max

1.56

oC/W

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

ICEV

Collect or Cut-off

Current (VBE = -1.5V)

VCE =rated VCEV

Tc =100

o C

0.5

µA

IEBO

Emitt er Cut-off Current

(IC =0)

VEB =9 V

VCEO(sus )

∗ Collector-Emitter

Sustaining Voltage

IC = 10 mA

400

VCE(sat)

∗ Collector-Emitter

Saturat ion Voltage

IC =2 A

IB =0.4 A

IC =5 A

IB =1 A

IC =8 A

IB =2 A

IC =5 A

IB =1 A

Tc =100

VBE(s at)

∗ Base-Emitter

Saturat ion Voltage

IC =2 A

IB =0.4 A

IC =5 A

IB =1 A

IC =5 A

IB =1 A

Tc =100

1.2

1.6

1.5

hFE

∗

DC Current G ain

IC =2 A

VCE =5 V

Group A

Group B

IC =5 A

VCE =5 V

RESI STIVE LO AD

St orage Time

Fall T ime

IC =2 A

VCC =300 V

IB1 =0.4 A

IB2 =-0.4 A

tp =30

µs

34.5

350

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =5 A

VCL = 250 V

IB1 =1 A

IB2 =-2 A

L = 200

µH

1.6

2.5

110

µs

INDUCTIVE LOAD

St orage Time

Fall T ime

IC =5 A

VCL = 250 V

IB1 =1 A

IB2 =-2 A

L = 200

µHTc = 125 oC

2.3

110

µs

* Pulsed: Pulse duration = 300

µs, duty cycle 2 %

Note : DC current gain pre-selected product (Group A and Group B). STMicroelectronics reserves the right to ship either groups according

to production availability. Please contact your nearest STMicroelectronics sales office for delivery details.

ST13007

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