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数据搜索系统，热门电子元器件搜索 |
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数据搜索系统，热门电子元器件搜索 |
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ST72104G2 数据表(PDF) 100 Page - STMicroelectronics |
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ST72104G2 数据表(HTML) 100 Page - STMicroelectronics |
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100 / 135 page  ST72104G, ST72215G, ST72216G, ST72254G 100/135 FUNCTIONAL OPERATING CONDITIONS (Cont’d) Figure 56. High LVD Threshold Versus V DD and f OSC for ROM devices 2) Figure 57. Medium LVD Threshold Versus V DD and f OSC for ROM devices 2) Figure 58. Low LVD Threshold Versus V DD and f OSC for ROM devices 2) Notes: 1. LVD typical data are based on TA=25°C. They are given only as design guidelines and are not tested. 2. The minimum VDD rise time rate is needed to insure a correct device power-on and LVD reset. Not tested in production. fOSC [MHz] SUPPLY VOLTAGE [V] 16 8 0 2.5 3 3.5 4 4.5 5 5.5 FUNCTI ONAL AREA DEVICE UNDER RESET IN THIS AREA FUNCTI ONALITY NOT GUARAN TEED IN THIS AREA VIT-≥3.85 fOSC [MHz] SUPPLY VOLTAGE [V] 16 8 0 2.5 3 VIT-≥3.5V 4 4.5 5 5.5 FUNCTI ONAL AREA DEVICE UNDER RESET IN THIS AREA FUNCTI ONALITY NOT GUARAN TEED IN THIS AREA fOSC [MHz] SUPPLY VOLTAGE [V] 16 8 0 2.5 VIT-≥3.00V 3.5 4 4.5 5 5.5 FUNCTI ONAL AREA DEVICE UNDER RESET IN THIS AREA FUNCTI ONALITY NOT GUARAN TEED IN THIS AREA |
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