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ST72104G2 数据表(PDF) 125 Page - STMicroelectronics |
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ST72104G2 数据表(HTML) 125 Page - STMicroelectronics |
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125 / 135 page ![]() ST72104G, ST72215G, ST72216G, ST72254G 125/135 8-BIT ADC CHARACTERISTICS (Cont’d) ADC Accuracy Figure 95. ADC Accuracy Characteristics Notes: 1. ADC Accuracy vs. Negative Injection Current: For IINJ-=0.8mA, the typical leakage induced inside the die is 1.6µA and the effect on the ADC accuracy is a loss of 1 LSB for each 10K Ω increase of the external analog source impedance. This effect on the ADC accuracy has been observed under worst-case conditions for injection: - negative injection - injection to an Input with analog capability, adjacent to the enabled Analog Input -at 5V VDD supply, and worst case temperature. 3. Data based on characterization results over the whole temperature range, monitored in production. Symbol Parameter Conditions Min Max Unit |ET| Total unadjusted error 1) VDD=5.0V, 3) fCPU=8MHz 1 LSB EO Offset error 1) -0.5 0.5 EG Gain Error 1) -0.5 0.5 |ED| Differential linearity error 1) 0.5 |EL| Integral linearity error 1) 0.5 EO EG 1 LSBIDEAL 1LS B IDE AL V DDA V SSA – 256 ---------------------------------------- - = Vin (LSBIDEAL) (1) Example of an actual transfer curve (2) The ideal transfer curve (3) End point correlation line ET=Total Unadjusted Error: maximum deviation between the actual and the ideal transfer curves. EO=Offset Error: deviation between the first actual transition and the first ideal one. EG=Gain Error: deviation between the last ideal transition and the last actual one. ED=Differential Linearity Error: maximum deviation between actual steps and the ideal one. EL=Integral Linearity Error: maximum deviation between any actual transition and the end point correlation line. Digital Result ADCDR 255 254 253 5 4 3 2 1 0 7 6 1 2 3 4 5 6 7 253 254 255 256 (1) (2) ET ED EL (3) VDDA VSSA |
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