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ST72521 数据表(PDF) 180 Page - STMicroelectronics |
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ST72521 数据表(HTML) 180 Page - STMicroelectronics |
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180 / 211 page ![]() ST72521 180/211 EMC CHARACTERISTICS (Cont’d) 12.7.3.2 Static and Dynamic Latch-Up s LU: 3 complementary static tests are required on 10 parts to assess the latch-up performance. A supply overvoltage (applied to each power supply pin) and a current injection (applied to each input, output and configurable I/O pin) are performed on each sample. This test conforms to the EIA/JESD 78 IC latch-up standard. For more details, refer to the AN1181 ST7 application note. s DLU: Electro-Static Discharges (one positive then one negative test) are applied to each pin of 3 samples when the micro is running to assess the latch-up performance in dynamic mode. Power supplies are set to the typical values, the oscillator is connected as near as possible to the pins of the micro and the component is put in reset mode. This test conforms to the IEC1000-4-2 and SAEJ1752/3 standards and is described in Figure 94. For more details, refer to the AN1181 ST7 application note. 12.7.3.3 Designing hardened software to avoid noise problems EMC characterization and optimization are per- formed at component level with a typical applica- tion environment and simplified MCU software. It should be noted that good EMC performance is highly dependent on the user application and the software in particular. Therefore it is recommended that the user applies EMC software optimization and prequalification tests in relation with the EMC level requested for his application. Software recommendations: The software flowchart must include the manage- ment of runaway conditions such as: – Corrupted program counter – Unexpected reset – Critical Data corruption (control registers...) Prequalification trials: Most of the common failures (unexpected reset and program counter corruption) can be repro- duced by manually forcing a low state on the RE- SET pin or the Oscillator pins for 1 second. To complete these trials, ESD stress can be ap- plied directly on the device, over the range of specification values. When unexpected behaviour is detected, the software can be hardened to pre- vent unrecoverable errors occurring (see applica- tion note AN1015). Electrical Sensitivities Figure 94. Simplified Diagram of the ESD Generator for DLU Notes: 1. Class description: A Class is an STMicroelectronics internal specification. All its limits are higher than the JEDEC spec- ifications, that means when a device belongs to Class A it exceeds the JEDEC standard. B Class strictly covers all the JEDEC criteria (international standard). 2. Schaffner NSG435 with a pointed test finger. Symbol Parameter Conditions Class 1) LU Static latch-up class TA=+25°C TA=+85°C TA=+125°C A A A DLU Dynamic latch-up class VDD=5.5V, fOSC=4MHz, TA=+25°C A RCH=50MΩ RD=330Ω CS=150pF ESD HV RELAY DISCHARGE TIP DISCHARGE RETURN CONNECTION GENERATOR 2) ST7 VDD VSS |
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