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ST7265X 数据表(PDF) 136 Page - STMicroelectronics |
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ST7265X 数据表(HTML) 136 Page - STMicroelectronics |
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136 / 166 page ![]() ST7265x 136/166 13.6 MEMORY CHARACTERISTICS Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified. 13.6.1 RAM and Hardware Registers 13.6.2 FLASH Memory Operating Conditions: fCPU = 8 MHz. Note 1: Guaranteed by Design. Figure 78. Two typical Applications with VPP Pin 1) Note 1: When the ICP mode is not required by the application, VPP pin must be tied to VSS. Symbol Parameter Conditions Min Typ Max Unit VRM Data retention mode 1) HALT mode (or RESET) 2 V DUAL VOLTAGE FLASH MEMORY Symbol Parameter Conditions Min Typ Max Unit fCPU Operating Frequency Read mode 8 MHz Write / Erase mode, TA=25°C 8 VPP Programming Voltage 4.0V <= VDD <= 5.5V 11.4 12.6 V IPP VPP Current Write / Erase 30 1) mA tPROG Byte Programming Time TA=25°C 100 500 1) µs tERASE Sector Erasing Time 2 10 1) sec Device Erasing Time 5 10 1) tVPP Internal VPP Stabilization Time 10 µs tRET Data Retention TA ≤ 55°C 20 years NRW Write Erase Cycles TA=25°C 100 cycles VPP ST72XXX 10k Ω PROGRAMMING TOOL VPP ST72XXX |
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