STB16NF06L datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STB16NF06L

功能描述	N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET™ POWER MOSFET

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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February 2002

.

STB16NF06L

N-CHANNEL 60V - 0.07

Ω - 16A D2PAK

STripFET™ POWER MOSFET

s

TYPICAL RDS(on) = 0.07Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

LOW GATE CHARGE AT 100 oC

s

LOW THRESHOLD DRIVE

s

SURFACE-MOUNTING D2PAK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX) OR

IN TAPE & REEL (SUFFIX “T4”)

DESCRIPTION

This Power MOSFET is the latest development of

STMicroelectronis unique "Single Feature Size™" strip-

based process. The resulting transistor shows extremely

high packing density for low on-resistance, rugged

avalanche characteristics and less critical alignment

steps

therefore

a

remarkable

manufacturing

reproducibility.

APPLICATIONS

s

MOTOR CONTROL, AUDIO AMPLIFIERS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SOLENOID AND RELAY DRIVERS

s

DC-DC & DC-AC CONVERTERS

s

AUTOMOTIVE ENVIRONMENT

TYPE

VDSS

RDS(on)

ID

STB16NF06L

60 V

<0.09

Ω

16 A

1

3

D2PAK

TO-263

(Suffix “T4”)

ABSOLUTE MAXIMUM RATINGS

(

•) Pulse width limited by safe operating area.

(1) ISD ≤ 16A, di/dt ≤ 210A/µs, VDD ≤ V(BR)DSS, Tj ≤ TJMAX.

(2) Starting Tj = 25 oC, ID = 8A, VDD = 30V

Symbol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

60

V

VDGR

Drain-gate Voltage (RGS = 20 kΩ)

60

V

VGS

Gate- source Voltage

± 16

V

ID

Drain Current (continuos) at TC = 25°C

16

A

ID

Drain Current (continuos) at TC = 100°C

11

A

IDM(•)

Drain Current (pulsed)

64

A

Ptot

Total Dissipation at TC = 25°C

45

W

Derating Factor

0.3

W/°C

dv/dt (1)

Peak Diode Recovery voltage slope

23

V/ns

EAS (2)

Single Pulse Avalanche Energy

127

mJ

Tstg

Storage Temperature

-65 to 175

°C

Tj

Max. Operating Junction Temperature

-55 to 175

°C

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STB16NF06L

制造商	部件名	数据表	功能描述
STMicroelectronics	STB16NF06L	406Kb / 13P	N-channel 60V - 0.07Ω - 16A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	STB16NF06L	405Kb / 13P	N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	STB16NF06L	405Kb / 13P	N-channel 60V - 0.07ohm - 16A - D2PAK STripFET Power MOSFET 26-Jun-2006
VBsemi Electronics Co.,...	STB16NF06L	1Mb / 9P	N-Channel 60 V (D-S) MOSFET
STMicroelectronics	STB16NF06LT4	405Kb / 13P	N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET 26-Jun-2006

More results

类似说明 - STB16NF06L

制造商	部件名	数据表	功能描述
STMicroelectronics	STB45NF06	112Kb / 6P	N-CHANNEL 60V - 0.022ohm - 38A D2PAK STripFET™ POWER MOSFET Aug-2000
	STB60NF06	425Kb / 9P	N-CHANNEL 60V - 0.014ohm - 60A D2PAK STripFET™ POWER MOSFET Feb-2001
	STD16NE06L-1	55Kb / 5P	N - CHANNEL 60V - 0.07 ohm - 16A - TO-251 STripFET POWER MOSFET Jul-1998
	STD16NE06L	55Kb / 5P	N - CHANNEL 60V - 0.07 ohm - 16A - DPAK STripFET POWER MOSFET Jun-1998
	STD16NE10L	444Kb / 6P	N - CHANNEL 100V - 0.07 ohm - 16A DPAK STripFET POWER MOSFET May-2000
	STP16NF06L	337Kb / 9P	N-CHANNEL 60V - 0.07 ohm - 16A TO-220/TO-220FP STripFET™ II POWER MOSFET Aug-2002
	STB16PF06L	301Kb / 10P	P-CHANNEL 60V - 0.11ohm - 16A D2PAK STripFET MOSFET Sep-2004
	STB16NF06L	406Kb / 13P	N-channel 60V - 0.07Ω - 16A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	STB16NF06LT4	405Kb / 13P	N-channel 60V - 0.07廓 - 16A - D2PAK STripFET??Power MOSFET 26-Jun-2006
	CD00002847	405Kb / 13P	N-channel 60V - 0.07ohm - 16A - D2PAK STripFET Power MOSFET 26-Jun-2006

More results

STB16NF06L 数据表(PDF) 1 Page - STMicroelectronics

STB16NF06L 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB16NF06L

类似说明 - STB16NF06L

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STB16NF06L 数据表(PDF) 1 Page - STMicroelectronics

STB16NF06L 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB16NF06L

类似说明 - STB16NF06L

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