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STB16NF06L 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB16NF06L
功能描述  N-CHANNEL 60V - 0.07 ohm - 16A D2PAK STripFET™ POWER MOSFET
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB16NF06L 数据表(HTML) 2 Page - STMicroelectronics

  STB16NF06L Datasheet HTML 1Page - STMicroelectronics STB16NF06L Datasheet HTML 2Page - STMicroelectronics STB16NF06L Datasheet HTML 3Page - STMicroelectronics STB16NF06L Datasheet HTML 4Page - STMicroelectronics STB16NF06L Datasheet HTML 5Page - STMicroelectronics STB16NF06L Datasheet HTML 6Page - STMicroelectronics STB16NF06L Datasheet HTML 7Page - STMicroelectronics STB16NF06L Datasheet HTML 8Page - STMicroelectronics STB16NF06L Datasheet HTML 9Page - STMicroelectronics  
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified)
OFF
ON (1)
DYNAMIC
Rthj-case
Rthj-amb
Tj
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
3.33
62.5
300
°C/W
°C/W
°C
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250 µA, VGS = 0
60
V
IDSS
Zero Gate Voltage
Drain Current (VGS = 0)
VDS = Max Rating
VDS = Max Rating TC = 125°C
1
10
µA
µA
IGSS
Gate-body Leakage
Current (VDS = 0)
VGS = ± 16V
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGS(th)
Gate Threshold Voltage
VDS = VGS
ID = 250 µA
1V
RDS(on)
Static Drain-source On
Resistance
VGS = 5 V
ID = 8 A
VGS = 10 V
ID = 8 A
0.08
0.07
0.10
0.09
Ω
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs (*)
Forward Transconductance
VDS > ID(on) x RDS(on)max,
ID =8 A
17
S
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
VDS = 25V, f = 1 MHz, VGS = 0
345
72
29
pF
pF
pF



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