STB24NF10 datasheet(1/6 Pages) STMICROELECTRONICS

部件名	STB24NF10

功能描述	N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB24NF10

N - CHANNEL 100V - 0.07

Ω - 24A TO-263

LOW GATE CHARGE STripFET

™ POWER MOSFET

PRELIMINARY DATA

s

TYPICAL RDS(on) = 0.07

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

SURFACE-MOUNTING D

2PAK (TO-263)

POWER PACKAGE IN TAPE & REEL

(SUFFIX ”T4”)

DESCRIPTION

This

MOSFET

series

realized

with

STMicroelectronics unique STripFET process has

specifically been designed to minimize input

capacitance and gate charge. It is therefore

suitable

as

primary

switch

in

advanced

high-efficiency, high-frequency isolated DC-DC

converters

for

Telecom

and

Computer

applications.

It

is

also

intended

for

any

applications with low gate drive requirements.

APPLICATIONS

s

HIGH-EFFICIENCY DC-DC CONVERTERS

s

UPS AND MOTOR CONTROL

®

INTERNAL SCHEMATIC DIAGRAM

April 2000

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Value

Unit

VDS

Drain-source Voltage (VGS = 0)

100

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

100

V

VGS

G ate-source Volt age

± 20

V

ID

Drain Current (continuous) at Tc =25

oC24

A

ID

Drain Current (continuous) at Tc = 100

oC15

A

IDM(

•)

Drain Current (pulsed)

96

A

Ptot

T otal Dissipation at Tc =25

oC80

W

Derating Factor

0.53

W /

oC

dv/ dt(1 )

Peak Diode Recovery voltage slope

9

V/ns

EAS (2)

Single Pulse Avalanche Energy

75

mJ

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. Operating Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

( 2) starting Tj =25

oC, I

D =24A , VDD = 50V

(1) ISD

≤ 24 A, di/dt ≤ 300A/µs, V

DD

≤ V

(BR)DSS,Tj

≤ T

JMA

TYPE

VDSS

RDS(on )

ID

STB24NF10

100 V

< 0.077

Ω

24 A

1

3

D

2PAK

TO-263

(Suffix ”T4”)

1/6

类似零件编号 - STB24NF10

制造商	部件名	数据表	功能描述
STMicroelectronics	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006
STMicroelectronics	STB24NF10	421Kb / 14P	N-channel 100V - 0.0055OHM - 26A - TO-220 - D2PAK Low gate charge STripFET TM II Power MOSFET 09-Aug-2006

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