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STB24NF10 数据表(PDF) 3 Page - STMicroelectronics |
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STB24NF10 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 6 page ![]() ELECTRICAL CHARACTERISTICS (continued) SWITCHING ON Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(on) tr Turn-on Delay T ime Rise Time VDD =50 V ID =12 A RG =4.7 Ω VGS =10 V (Resistive Load, see fig. 3) 58 45 ns ns Qg Q gs Qgd Tot al G ate Charge Gat e-Source Charge Gat e-Drain Charge VDD =80 V ID =24 A VGS =10 V 30 6 10 nC nC nC SWITCHING OFF Symbo l Parameter Test Con ditions Min. Typ. Max. Unit td(off) tf Turn-off Delay T ime Fall T ime VDD =27 V ID =12 A RG =4.7 Ω VGS =10 V (Resistive Load, see fig. 3) 49 17 ns ns td(off) tf tc Off -volt age Rise T ime Fall T ime Cross-over Time Vclamp = 80 V I D =24 A RG =4.7 Ω VGS =10 V (Induct ive Load, see fig. 5) 43 36 39 ns ns ns SOURCE DRAIN DIODE Symbo l Parameter Test Con ditions Min. Typ. Max. Unit ISD ISDM ( •) Source-drain Current Source-drain Current (pulsed) 24 96 A A VSD ( ∗)Forward On Voltage ISD =24 A VGS =0 1. 5 V trr Qrr IRRM Reverse Recovery Time Reverse Recovery Charge Reverse Recovery Current ISD = 24 A di/dt = 100 A/ µs VDD =50 V Tj =150 oC (see t est circuit, f ig. 5) 100 375 7.5 ns nC A ( ∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 % ( •) Pulse width limited by safe operatingarea STB24NF10 3/6 |
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