STB3NA80 datasheet(1/10 Pages) STMICROELECTRONICS

部件名	STB3NA80

功能描述	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB3NA80

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

n

TYPICAL RDS(on) = 3.5

Ω

n

± 30V GATE TO SOURCE VOLTAGE RATING

n

100% AVALANCHE TESTED

n

REPETITIVE AVALANCHE DATA AT 100

oC

n

LOW INTRINSIC CAPACITANCES

n

GATE CHARGE MINIMIZED

n

REDUCED THRESHOLD VOLTAGE SPREAD

n

THROUGH-HOLE I2PAK (TO-262) POWER

PACKAGE IN TUBE (SUFFIX ”-1”)

n

SURFACE-MOUNTING D2PACK (TO-263)

POWER PACKAGE IN TUBE (NO SUFFIX)

OR IN TAPE & REEL (SUFFIX ”T4”)

APPLICATIONS

n

HIGH CURRENT, HIGH SPEED SWITCHING

n

SWITCH MODE POWER SUPPLIES (SMPS)

n

DC-AC CONVERTERS FOR WELDING

EQUIPMENT AND UNINTERRUPTIBLE

POWER SUPPLIES AND MOTOR DRIVE

INTERNAL SCHEMATIC DIAGRAM

ABSOLUTE MAXIMUM RATINGS

Symb ol

Parameter

Valu e

Unit

VDS

Drain-source Voltage (VGS = 0)

800

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

800

V

VGS

Gat e-source Voltage

± 30

V

ID

Drain Current (continuous) at Tc =25

oC3.1

A

ID

Drain Current (continuous) at Tc =100

oC2

A

IDM(

•)

Drain Current (pulsed)

12. 5

A

Ptot

T otal Dissipat ion at Tc =25

oC

100

W

Derating Fact or

1.25

W/

oC

Tstg

Storage Temperat ure

-65 to 150

oC

Tj

Max. O perat ing Junction Temperature

150

oC

(

•) Pulse width limited by safe operating area

TYPE

VDSS

RDS(on )

ID

STB3NA80

800 V

< 4.5

Ω

3. 1 A

October 1995

1 2

3

1

3

I2PAK

TO-262

D2PAK

TO-263

1/10

类似零件编号 - STB3NA80

制造商	部件名	数据表	功能描述
STMicroelectronics	STB3NA60-1	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Mar-1996

More results

类似说明 - STB3NA80

制造商	部件名	数据表	功能描述
STMicroelectronics	STB3NA60-1	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR Mar-1996
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