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STB3NA80 数据表(PDF) 2 Page - STMicroelectronics

部件名 STB3NA80
功能描述  N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR
PDF  10 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB3NA80 数据表(HTML) 2 Page - STMicroelectronics

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THERMAL DATA
Rthj-ca se
Rthj-amb
R thc-sin k
Tl
Thermal Resistance Junction-case
Max
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
Typ
Maximum Lead T emperature For Soldering Purpose
0.8
62.5
0.5
300
oC/W
oC/W
oC/W
oC
AVALANCHE CHARACTERISTICS
Symbo l
Parameter
Max Valu e
Unit
IAR
Avalanche Current, Repet itive or Not-Repetitive
(pulse width limited by Tj max,
δ <1%)
3.1
A
EAS
Single Pulse Avalanche Energy
(st arting Tj =25
oC, ID =IAR,VDD =50 V)
48
mJ
EAR
Repetitive Avalanche Energy
(pulse width limited by Tj max,
δ <1%)
2mJ
IAR
Avalanche Current, Repet itive or Not-Repetitive
(Tc =100
oC, pulse width limited by T
j max ,
δ <1%)
2A
ELECTRICAL CHARACTERISTICS (Tcase =25
oC unless otherwise specified)
OFF
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
V(BR)DSS
Drain-source
Breakdown Voltage
ID = 250
µAVGS =0
800
V
IDSS
Zero G ate Volt age
Drain Current (VGS =0)
VDS = Max Rating
VDS = Max Rating x 0.8
Tc =125
oC
250
1000
µA
µA
IGSS
Gat e-body Leakage
Current (VDS =0)
VGS =
± 30 V
± 100
nA
ON (
∗)
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
VGS(th)
Gat e Threshold Voltage VDS =VGS
ID = 250
µA
2.25
3
3.75
V
RDS(on)
Static Drain-source On
Resistance
VGS = 10V
ID =1.5 A
VGS =10V
ID =1.5 A
Tc = 100
oC
3. 5
4.5
9
Ω
Ω
ID(on )
On Stat e Drain Current
VDS >ID(on) xRDS(on)max
VGS =10 V
3.1
A
DYNAMIC
Symbo l
Parameter
T est Con ditio ns
Min .
T yp.
Max.
Uni t
gfs (
∗)Forward
Transconductance
VDS >ID(on) xRDS(on)max
ID = 1.5 A
1.5
3
S
Cis s
Coss
Crss
Input Capacit ance
Out put Capacitance
Reverse T ransf er
Capacitance
VDS =25 V
f = 1 MHz
VGS = 0
730
85
20
950
115
30
pF
pF
pF
STB3NA80
2/10



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