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数据搜索系统，热门电子元器件搜索 |
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RT3NDDM 数据表(PDF) 1 Page - Isahaya Electronics Corporation |
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RT3NDDM 数据表(HTML) 1 Page - Isahaya Electronics Corporation |
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1 / 3 page  DESCRIPTION RT3NDDM is a composite transistor built with two RT1N237 chips in SC-88 package. FEATURE Silicon NPN epitaxial type Built in bias resistor (R1=2.2kΩ，R2=47kΩ) Each transistor elements are independent. Mini package for easy mounting APPLICATION Inverted circuit, switching circuit, interface circuit, driver circuit PRELIMINARY RT3NDDM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type OUTLINE DRAWING Unit：mm MAXIMUM RATING (Ta=25℃) SYMBOL PARAMETER RATING UNIT VCBO Collector to Base voltage 50 V VEBO Emitter to Base voltage 10 V VCEO Collector to Emitter voltage 50 V IC Collector current 100 mA ICM Peak Collector current 200 mA PC Collector dissipation（Total, Ta=25℃） 150 mW Tj Junction temperature ＋ 150 ℃ Tstg Storage temperature -55∼＋150 ℃ MARKING D N D . ① ② ③ ⑥ ⑤ ④ ISAHAYA ELECTRONICS CORPORATION TERMINAL CONNECTOR ①： EMITTER1 ②： BASE1 ③： COLLECTOR2 ④： EMITTER2 ⑤： BASE2 ⑥ :COLLECTOR1 JEITA：SC-88 1.25 2.1 ① ② ③ ⑤ ④ ⑥ RTr2 RTr1 R1 R1 R2 R2 ① ② ③ ④ ⑤ ⑥ |
类似零件编号 - RT3NDDM |
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类似说明 - RT3NDDM |
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