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RT3NDDM 数据表(PDF) 2 Page - Isahaya Electronics Corporation |
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RT3NDDM 数据表(HTML) 2 Page - Isahaya Electronics Corporation |
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2 / 3 page ![]() TYPICAL CHARACTERISTICS ( Tr1,Tr2 ) PRELIMINARY RT3NDDM Composite Transistor With Resistor For Switching Application Silicon NPN Epitaxial Type ELECTRICAL CHARACTERISTICS (Ta=25℃) Limits Symbol Parameter Test conditions Min Typ Max Unit V(BR)CEO Collector to Emitter break down voltage IC=100μA,RBE=∞ 50 - - V ICBO Collector cut off current VCB =50V,IE=0 - - 0.1 μ A hFE DC forward current gain VCE=5V,IC=10mA 80 - - - VCE(sat) Collector to Emitter saturation voltage IC=10mA,IB=0.5mA - 0.1 0.3 V VI(ON) Input on voltage VCE=0.2V,IC=5mA - 0.7 1.1 V VI(OFF) Input off voltage VCE=5V,IC=100μA 0.5 0.6 - V R1 Input resistor - 1.5 2.2 2.9 kΩ R2/R1 Resistor ratio - 17 22 26 - fT Gain band width product VCE=6V,IE=-10mA - 200 - MHZ ISAHAYA ELECTRONICS CORPORATION INPUT ON VOLTAGE VS. COLLECTOR CURRENT 0.1 1 10 1 10 100 COLLECTOR CURRENT IC(mA) VCE=0.2V COLLECTOR CURRENT VS. INPUT OFF VOLTAGE 10 100 1000 0.0 0.4 0.8 1.2 1.6 2.0 INPUT OFF VOLTAGE VI(OFF)(V) VCE=5V DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT 10 100 1000 1 10 100 COLLECTOR CURRENT IC(mA) VCE=5V |
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