STB55NE06 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STB55NE06

功能描述	N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE” POWER MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB55NE06

N - CHANNEL ENHANCEMENT MODE

” SINGLE FEATURE SIZE

™ ” POWER MOSFET

s

TYPICAL RDS(on) = 0.019

Ω

s

EXCEPTIONAL dv/dt CAPABILITY

s

100% AVALANCHE TESTED

s

LOW GATE CHARGE 100

oC

s

HIGH dv/dt CAPABILITY

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR THROUGH-HOLE VERSION CONTACT

SALES OFFICE

DESCRIPTION

This Power Mosfet is the latest development of

SGS-THOMSON unique ”Single Feature Size”

strip-based process. The resulting transistor

shows extremely high packing density for low on-

resistance, rugged avalance characteristics and

less critical alignment steps therefore a remark-

able manufacturing reproducibility.

APPLICATIONS

s

DC MOTOR CONTROL

s

DC-DC & DC-AC CONVERTERS

s

SYNCHRONOUS RECTIFICATION

INTERNAL SCHEMATIC DIAGRAM

December 1997

1

3

D

2PAK

TO-263

(suffix ”T4”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Uni t

VDS

Drain-source Volt age (VGS =0)

60

V

VDGR

Drain- gate Volt age (RGS =20 k

Ω)

60

V

VGS

Gat e-source Voltage

± 20

V

ID

Drain Current (continuous) at Tc =25

oC55

A

ID

Drain Current (continuous) at Tc =100

oC39

A

IDM(

•)

Drain Current (pulsed)

220

A

Ptot

Tot al Dissipation at Tc =25

oC

130

W

Derating F act or

0. 96

W/

oC

dv/dt

Peak Diode Recovery voltage slope

7

V/ ns

Tstg

Storage Temperature

-65 to 175

oC

Tj

Max. O perat ing Junction Temperature

175

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 55 A,di/dt ≤ 300 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST B55NE06

60 V

< 0.022

Ω

55 A

1/8

类似零件编号 - STB55NE06

制造商	部件名	数据表	功能描述
STMicroelectronics	STB55NE06L	55Kb / 5P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Mar-1998

More results

类似说明 - STB55NE06

制造商	部件名	数据表	功能描述
STMicroelectronics	STB60NE06-16	115Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Jan-1998
	STB80NE06-10	94Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-1998
	STD20NE03L	105Kb / 9P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET Dec-1997
	STD20NE06	96Kb / 8P	N - CHANNEL ENHANCEMENT MODE ??SINGLE FEATURE SIZE ??POWER MOSFET Jan-1998
	STP16NE06L	70Kb / 7P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE] POWER MOSFET Oct-1997
	STP55NE06	120Kb / 9P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Jan-1998
	STP55NE06L	57Kb / 6P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997
	STP60NE03L-10	99Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Dec-1997
	STP80NE03L-06	87Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-2000
	STP80NE06-10	92Kb / 8P	N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET Feb-1998

More results

STB55NE06 数据表(PDF) 1 Page - STMicroelectronics

STB55NE06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB55NE06

类似说明 - STB55NE06

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链接网址

STB55NE06 数据表(PDF) 1 Page - STMicroelectronics

STB55NE06 数据表(HTML) 1 Page - STMicroelectronics

类似零件编号 - STB55NE06

类似说明 - STB55NE06

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数据表 下载

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