STB55NE06 datasheet(2/8 Pages) STMICROELECTRONICS

2 / 8 page

THERMAL DATA

Rthj-ca se

Rthj -am b

Rthc-si nk

Thermal Resistance Junction-case

Max

Thermal Resistance Junction-ambient

Max

Thermal Resistance Case-sink

Typ

Maximum Lead Temperature For Soldering Purpose

1.15

62.5

0.5

300

oC/W

AVALANCHE CHARACTERISTICS

Symb ol

Parameter

Max Valu e

Uni t

IAR

Avalanche Current , Repet itive or Not -Repetitive

(pulse widt h limited by Tj max,

δ <1%)

EAS

Single Pulse Avalanche Energy

(starting Tj =25

oC, ID =IAR,VDD =25 V)

200

ELECTRICAL CHARACTERISTICS (Tcase =25

oC unless otherwise specified)

OFF

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

V(BR)DSS

Drain-source

Breakdown Volt age

ID = 250

µAVGS =0

IDSS

Zero Gat e Voltage

Drain Current (VGS =0)

VDS =Max Rating

Tc =125

µA

IGSS

Gate-body Leakage

Current (VDS =0)

VGS =

± 20 V

± 100

ON (

∗)

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

VGS(th)

Gate T hreshold Voltage VDS =VGS

ID =250

µA

RDS(on)

St atic Drain-source On

Resistance

VGS = 10V

ID = 27.5 A

0.019

0. 022

Ω

ID(o n)

On Stat e Drain Current

VDS >ID(on) xRDS(on)max

VGS =10 V

DYNAMIC

Symb ol

Parameter

Test Cond ition s

Mi n.

Typ .

Max.

Un it

gfs (

∗)Forward

Transconductance

VDS >ID(on) xRDS(on) max

ID =27.5 A

Ciss

Coss

Crss

Input Capacitance

Output Capacit ance

Reverse Transfer

Capacitance

VDS = 25V

f = 1MHz

VGS = 0

3050

380

100

4000

500

130

STB55NE06

2/8

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