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October 2001

STB90NF03L

N-CHANNEL 30V - 0.0056

LOW GATE CHARGE STripFET™ POWER MOSFET

s

s

s

s

CONDUCTION LOSSES REDUCED

s

SWITCHING LOSSES REDUCED

DESCRIPTION

This application specific Power Mosfet is the third

generation of STMicroelectronics unique “Single

Feature Size

transistor shows the best trade-off between on-re-

sistance and gate charge. When used as high and

low side in buck regulators, it gives the best perfor-

mance in terms of both conduction and switching

losses. This is extremely important for mother-

boards where fast switching and high efficiency are

of paramount importance.

APPLICATIONS

s

SPECIFICALLY DESIGNED AND OPTIMISED

FOR HIGH EFFICIENCY CPU CORE DC/DC

CONVERTERS

ABSOLUTE MAXIMUM RATINGS

TYPE

STB90NF03L

30 V

< 0.0065

Ω

90 A

Symbol

Parameter

Value

Unit

30

V

30

V

Gate- source Voltage

± 18

V

90

A

65

A

Drain Current (pulsed)

360

A

150

W

Derating Factor

0.73

W/°C

Storage Temperature

– 55 to 175

°C

Max. Operating Junction Temperature

1

3

INTERNAL SCHEMATIC DIAGRAM