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STB90NF03L 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB90NF03L
功能描述  N-CHANNEL 30V - 0.0056ohm - 90A D2PAK LOW GATE CHARGE STripFET™ POWER MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB90NF03L 数据表(HTML) 3 Page - STMicroelectronics

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STB90NF03L
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 15V, ID = 45 A
RG = 4.7Ω VGS = 4.5 V
(see test circuit, Figure 3)
30
ns
tr
Rise Time
200
ns
Qg
Total Gate Charge
VDD = 24V, ID =90A,VGS = 5V
35
47
nC
Qgs
Gate-Source Charge
10
nC
Qgd
Gate-Drain Charge
18
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
Turn-off-Delay Time
VDD = 15V, ID = 45 A,
RG =4.7Ω, VGS = 4.5 V
(see test circuit, Figure 3)
50
ns
tf
Fall Time
105
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
90
A
ISDM (1)
Source-drain Current (pulsed)
360
A
VSD (2)
Forward On Voltage
ISD = 90 A, VGS = 0
1.3
V
trr
Reverse Recovery Time
ISD = 90 A, di/dt = 100A/µs,
VDD = 15V, Tj = 150°C
(see test circuit, Figure 5)
80
ns
Qrr
Reverse Recovery Charge
90
nC
IRRM
Reverse Recovery Current
2.5
A
Thermal Impedence
Safe Operating Area



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