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2STC4468 数据表(PDF) 1 Page - STMicroelectronics |
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2STC4468 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 9 page ![]() This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. June 2007 Rev 1 1/9 9 2STC4468 High power NPN epitaxial planar bipolar transistor General features ■ High breakdown voltage VCEO=140V ■ Complementary to 2STA1695 ■ Fast-switching speed ■ Typical ft =20MHz ■ Fully characterized at 125 oC Applications ■ Audio power amplifier Description The device is a NPN transistor manufactured using new BiT-LA (Bipolar transistor for linear amplifier) technology. The resulting transistor shows good gain linearity behaviour. Recommended for 70W to 100W high fidelity audio frequency amplifier output stage. Order codes Preliminary data Internal schematic diagram Electrical ratings TO-3P 1 2 3 Part Number Marking Package Packaging 2STC4468 2STC4468 TO-3P Tube www.st.com |
类似零件编号 - 2STC4468 |
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类似说明 - 2STC4468 |
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