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2STC4468 数据表(PDF) 3 Page - STMicroelectronics

部件名 2STC4468
功能描述  High power NPN epitaxial planar bipolar transistor
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

2STC4468 数据表(HTML) 3 Page - STMicroelectronics

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2STC4468
Electrical characteristics
3/9
1
Electrical characteristics
(TCASE = 25°C; unless otherwise specified)
Table 3.
Electrical characteristics
Note: 1 Pulsed duration = 300
µs, duty cycle ≤1.5%
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector cut-off current
(IE = 0)
VCB = 200V
0.1
µA
IEBO
Emitter cut-off current
(IC = 0)
VEB = 6V
0.1
µA
V(BR)CEO(1)
Collector-emitter breakdown
voltage (IB = 0)
IC = 50mA
140
V
V(BR)CBO
Collector-emitter breakdown
voltage (IE = 0)
IC = 100µA
200
V
V(BR)EBO(1)
Collector-emitter breakdown
voltage (IC = 0)
IE = 1mA
6V
VCE(sat) (1)
Collector-emitter saturation
voltage
IC = 5A
IB = 500mA
IC = 7A
IB = 700mA
0.5
0.7
V
V
VBE
Base-emitter voltage
VCE = 5V
IC = 5A
1.3
V
hFE
DC current gain
IC = 3A
VCE = 4V
IC = 5A
VCE = 4V
70
50
140
fT
Transition frequency
IC = 0.5A
VCE = 12V
20
MHz
CCBO
Collector-base capacitance
IE = 0 VCB = 10V f = 1MHz
150
pF
ton
tstg
toff
Resistive Load
Turn-on time
Storage time
Fall time
IC = 5A
VCC = 60V
IB1 = -IB2 = 0.5A
0.22
4.3
0.5
µs
µs
µs



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