STB9NB50 datasheet(1/8 Pages) STMICROELECTRONICS

部件名	STB9NB50

功能描述	N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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STB9NB50

N - CHANNEL ENHANCEMENT MODE

Power MESH

™ MOSFET

s

TYPICAL RDS(on) = 0.75

Ω

s

EXTREMELY HIGH dv/dt CAPABILITY

s

AVALANCHE RUGGED TECHNOLOGY

s

100% AVALANCHE TESTED

s

REPETITIVE AVALANCHE DATA AT 100

oC

s

VERY LOW INTRINSIC CAPACITANCE

s

GATE CHARGE MINIMIZED

s

LOW LEAKAGE CURRENT

s

APPLICATION ORIENTED

CHARACTERIZATION

s

FOR SMD D

2PAK VERSION CONTACT

SALES OFFICE

APPLICATIONS

s

HIGH CURRENT, HIGH SPEED SWITCHING

s

SWITCH MODE POWER SUPPLY (SMPS)

s

DC-AC CONVERTER FOR WELDING

EQUIPMENT AND UNINTERRUPTABLE

POWER SUPPLY (UPS)

INTERNAL SCHEMATIC DIAGRAM

March 1998

1 2

3

I

2PAK

TO-262

(suffix ”-1”)

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Val ue

Uni t

VDS

Drain-source Voltage (VGS = 0)

500

V

VDGR

Drain- gate Voltage (RGS =20 k

Ω)

500

V

VGS

Gate-source Voltage

± 30

V

ID

Drain Current (cont inuous) at Tc =25

oC8.6

A

ID

Drain Current (cont inuous) at Tc =100

oC5.4

A

IDM(

•)

Drain Current (pulsed)

34. 4

A

Ptot

Tot al Dissipation at Tc =25

oC

125

W

Derating Fact or

1.0

W/

oC

dv/dt (1)

Peak Diode Recovery voltage slope

4.5

V/ ns

Tstg

St orage Temperature

-65 to 150

oC

Tj

Max. Operat ing Junction Temperat ure

150

oC

(

•) Pulse width limited by safe operating area

(1)ISD

≤ 9A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX

TYPE

VDSS

RDS(on)

ID

ST B9NB50

500 V

< 0.85

Ω

8.6 A

1/8

类似零件编号 - STB9NB50

制造商	部件名	数据表	功能描述
STMicroelectronics	STB9NB60	93Kb / 9P	N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET Jan-2000
VBsemi Electronics Co.,...	STB9NB60	1Mb / 10P	N-Channel 650V (D-S) Power MOSFET

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