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STB9NB50 数据表(PDF) 3 Page - STMicroelectronics

部件名 STB9NB50
功能描述  N - CHANNEL ENHANCEMENT MODE Power MESH MOSFET
PDF  8 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STB9NB50 数据表(HTML) 3 Page - STMicroelectronics

  STB9NB50 Datasheet HTML 1Page - STMicroelectronics STB9NB50 Datasheet HTML 2Page - STMicroelectronics STB9NB50 Datasheet HTML 3Page - STMicroelectronics STB9NB50 Datasheet HTML 4Page - STMicroelectronics STB9NB50 Datasheet HTML 5Page - STMicroelectronics STB9NB50 Datasheet HTML 6Page - STMicroelectronics STB9NB50 Datasheet HTML 7Page - STMicroelectronics STB9NB50 Datasheet HTML 8Page - STMicroelectronics  
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ELECTRICAL CHARACTERISTICS (continued)
SWITCHING ON
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
td(on)
tr
Turn-on Time
Rise Time
VDD =250 V
ID =4.3 A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 3)
19
11
30
15
ns
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD =400 V
ID =8.6 A
VGS =10 V
32
10. 6
13. 7
45
nC
nC
nC
SWITCHING OFF
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
tr(Voff)
tf
tc
Of f-voltage Rise Time
Fall Time
Cross-over Time
VDD =400 V
ID =8.6
A
RG =4.7
Ω
VGS =10 V
(see test circuit, figure 5)
11. 5
11
20
17
16
28
ns
ns
ns
SOURCE DRAIN DIODE
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
ISD
ISDM (
•)
Source-drain Current
Source-drain Current
(pulsed)
8.6
34.4
A
A
VSD (
∗)
Forward On Voltage
ISD =8. 6 A
VGS =0
1.6
V
trr
Qrr
IRRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
ISD = 8.6 A
di/dt = 100 A/
µs
VR =100 V
Tj =150
o C
(see test circuit, figure 5)
420
3.5
16. 5
ns
µC
A
(
∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(
•) Pulse width limited by safe operating area
Safe Operating Area
Thermal Impedance
STB9NB50
3/8



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