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T4 数据表(PDF) 3 Page - STMicroelectronics |
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T4 数据表(HTML) 3 Page - STMicroelectronics |
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3 / 10 page ![]() T4 Series 3/10 Table 5: Static Characteristics Table 6: Thermal resistance Symbol Test Conditions Value Unit VT (2) ITM = 5.5 A tp = 380 µs Tj = 25°C MAX. 1.56 V Vto (2) Threshold voltage Tj = 125°C MAX. 0.89 V Rd (2) Dynamic resistance Tj = 125°C MAX. 120 m Ω IDRM IRRM VDRM = VRRM Tj = 25°C MAX. 5µA Tj = 125°C 1mA Note 1: minimum IGT is guaranted at 5% of IGT max. Note 2: for both polarities of A2 referenced to A1. Symbol Parameter Value Unit Rth(j-c) Junction to case (AC) IPAK / DPAK / TO-220AB 2.6 °C/W ISOWATT220AB 4.0 Rth(j-a) Junction to ambient S = 0.5 cm² DPAK 70 °C/W TO-220AB / ISOWATT220AB 60 IPAK 100 S = Copper surface under tab. |
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