T4 Series

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Figure 1: Maximum power dissipation versus

RMS on-state current (full cycle)

Figure 2: RMS on-state current versus case

temperature (full cycle)

Figure 3: RMS on-state current versus ambient

temperature (printed circuit board FR4, copper

thickness: 35µm) (full cycle)

Figure 4: Relative

variation

of

thermal

impedance versus pulse duration

Figure 5: On-state characteristics (maximum

values)

Figure 6: Surge peak on-state current versus

number of cycles

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

0

1

2

3

4

5

6

P(W)

I

(A)

T(RMS)

0

25

50

75

100

125

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

I

(A)

T(RMS)

T (°C)

C

TO-220AB / DPAK / IPAK

ISOWATT220AB

0

25

50

75

100

125

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

I

(A)

T(RMS)

T (°C)

C

DPAK

(S=0.5CM )

2

1E-2

1E-1

1E+0

1E+1

1E+2

5E+2

1E-2

1E-1

1E+0

K=[Z /R

th

t (s)

p

TO-220AB / DPAK / IPAK

DPAK / IPAK

ISOWATT220AB

TO-220AB / ISOWATT220AB

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

0.1

1.0

10.0

30.0

I

(A)

TM

V

(V)

TM

T max.

V = 0.90V

R = 120 m

j

to

d

Ω

T=

j

T max.

j

T = 25°C

j

.

1

10

100

1000

0

5

10

15

20

25

30

35

I

(A)

TSM

Number of cycles

t=20ms

One cycle

Non repetitive

T initial=25°C

j

Repetitive

T =110°C

C