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September 2001

STD2NB50

STD2NB50-1

N-CHANNEL 500V - 5

Ω - 1A DPAK / IPAK

PowerMesh™ MOSFET

s

s

100% AVALANCHE TESTED

s

VERY LOW INTRINSIC CAPACITANCES

s

ADD SUFFIX “T4” FOR ORDERING IN TAPE &

REEL

DESCRIPTION

Using the latest high voltage MESH OVERLAY™

process, STMicroelectronics has designed an ad-

vanced family of power MOSFETs with outstanding

performances. The new patent pending strip layout

coupled with the Company’s proprieraty edge termi-

nation structure, gives the lowest RDS(on) per area,

exceptional avalanche and dv/dt capabilities and

unrivalled gate charge and switching characteris-

tics.

APPLICATIONS

s

SWITH MODE POWER SUPPLIES (SMPS)

s

LIGHTING FOR INDUSTRIAL AND CONSUMER

ENVIRONMENT

ABSOLUTE MAXIMUM RATINGS

(•)Pulse width limited by safe operating area

TYPE

STD2NB50

STD2NB50-1

500V

500V

< 6

Ω

< 6

Ω

1 A

1 A

Symbol

Parameter

Value

Unit

500

V

500

V

Gate- source Voltage

± 30

V

1A

0.63

A

Drain Current (pulsed)

4

A

40

W

Derating Factor

0.32

W/°C

dv/dt(1)

Peak Diode Recovery voltage slope

3.5

V/ns

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

3

2

1

1

3

DPAK

IPAK

INTERNAL SCHEMATIC DIAGRAM