STD2NB50 datasheet(3/10 Pages) STMICROELECTRONICS

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STD2NB50/STD2NB50-1

ELECTRICAL CHARACTERISTICS (CONTINUED)

SWITCHING ON

SWITCHING OFF

SOURCE DRAIN DIODE

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by safe operating area.

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on Delay Time

VDD = 200V, ID = 0.5A

RG = 4.7Ω VGS = 10V

(see test circuit, Figure 3)

Rise Time

Total Gate Charge

VDD = 4000V, ID = 1A,

VGS = 10V

710

Qgs

Gate-Source Charge

2.5

Qgd

Gate-Drain Charge

3.5

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

tr(Voff)

Off-voltage Rise Time

VDD = 400V, ID = 1 A,

RG = 4.7Ω, VGS = 10V

(see test circuit, Figure 5)

Fall Time

Cross-over Time

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

ISD

Source-drain Current

ISDM (2)

Source-drain Current (pulsed)

VSD (1)

Forward On Voltage

ISD = 1A, VGS = 0

1.5

trr

Reverse Recovery Time

ISD = 1A, di/dt = 100A/µs,

VDD = 100V, Tj = 150°C

(see test circuit, Figure 5)

330

Qrr

Reverse Recovery Charge

780

µC

IRRM

Reverse Recovery Current

4.7

Thermal Impedence

Safe Operating Area

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