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July 2000

STGD7NB60H

N-CHANNEL 7A - 600V - DPAK

PowerMESH™ IGBT

s

HIGH INPUT IMPEDANCE

s

s

OFF LOSSES INCLUDE TAIL CURRENT

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LOW GATE CHARGE

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HIGH CURRENT CAPABILITY

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VERY HIGH FREQUENCY OPERATION

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CO-PACKAGED WITH TURBOSWITCHT

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TYPICAL SHORT CIRCUIT WITHSTAND TIME

5MICROS S-family, 4 micro H family

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ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has de-

signed an advanced family of IGBTs, the Power-

MESH™ IGBTs, with outstanding perfomances.

The suffix "H" identifies a family optimized for high

frequency applications (up to 50kHz)in order to

achieve very high switching performances (reduced

tfall) mantaining a low voltage drop.

APPLICATIONS

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HIGH FREQUENCY MOTOR CONTROLS

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SMPS and PFC IN BOTH HARD SWITCH AND

RESONANT TOPOLOGIES

ABSOLUTE MAXIMUM RATINGS

TYPE

STD7NB60H

600 V

< 2.8 V7 A

Symbol

Parameter

Value

Unit

600

V

Emitter-Collector Voltage

20

V

Gate-Emitter Voltage

± 20

V

14

A

7A

Collector Current (pulsed)

56

A

55

W

Derating Factor

0.44

W/°C

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

150

°C

DPAK

1

3

INTERNAL SCHEMATIC DIAGRAM