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STGD7NB60H 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGD7NB60H
功能描述  N-CHANNEL 7A - 600V - DPAK PowerMESH™ IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGD7NB60H 数据表(HTML) 2 Page - STMicroelectronics

  STGD7NB60H Datasheet HTML 1Page - STMicroelectronics STGD7NB60H Datasheet HTML 2Page - STMicroelectronics STGD7NB60H Datasheet HTML 3Page - STMicroelectronics STGD7NB60H Datasheet HTML 4Page - STMicroelectronics STGD7NB60H Datasheet HTML 5Page - STMicroelectronics STGD7NB60H Datasheet HTML 6Page - STMicroelectronics STGD7NB60H Datasheet HTML 7Page - STMicroelectronics STGD7NB60H Datasheet HTML 8Page - STMicroelectronics STGD7NB60H Datasheet HTML 9Page - STMicroelectronics  
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STGD7NB60H
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
SWITCHING ON
Rthj-case
Thermal Resistance Junction-case Max
2.27
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
100
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
1.5
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collectro-Emitter Breakdown
Voltage
IC = 250 µA, VGE = 0
600
V
ICES
Collector cut-off
(VGE = 0)
VCE = Max Rating, TC = 25 °C
10
µA
VCE = Max Rating, TC = 125 °C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 20V , VCE = 0
±100
nA
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA
35
V
VCE(sat)
Collector-Emitter Saturation
Voltage
VGE = 15V, IC = 7 A
2.3
2.8
V
VGE = 15V, IC = 7 A, Tj =125°C
1.9
V
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE = 25 V , IC =3 A
3.5
5
S
Cies
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
560
pF
Coes
Output Capacitance
68
pF
Cres
Reverse Transfer
Capacitance
15
pF
Qg
Qge
Qgc
Total Gate Charge
Gate-Emitter Charge
Gate-Collector Charge
VCE = 480V, IC = 7 A,
VGE = 15V
42
7.9
17.6
55
nC
nC
nC
ICL
Latching Current
Vclamp = 480 V , Tj = 150°C
RG = 10 Ω
28
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Turn-on Delay Time
Rise Time
VCC = 480 V, IC = 7 A
RG =10Ω , VGE = 15 V
15
48
ns
ns
(di/dt)on
Eon
Turn-on Current Slope
Turn-on Switching Losses
VCC= 480 V, IC = 7 A RG=10Ω
VGE = 15 V,Tj = 125°C
160
70
A/µs
µJ



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