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STGP10NB37LZ 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGP10NB37LZ
功能描述  N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh™ IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP10NB37LZ 数据表(HTML) 2 Page - STMicroelectronics

  STGP10NB37LZ Datasheet HTML 1Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 2Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 3Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 4Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 5Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 6Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 7Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 8Page - STMicroelectronics STGP10NB37LZ Datasheet HTML 9Page - STMicroelectronics  
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THERMAL DATA
ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
ON (1)
DYNAMIC
Rthj-case
Thermal Resistance Junction-case Max
1.2
°C/W
Rthj-amb
Thermal Resistance Junction-ambient Max
62.5
°C/W
Rthc-sink
Thermal Resistance Case-sink Typ
0.2
°C/W
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
BV(CES)
Clamped Voltage
IC = 2 mA, VGE = 0,
Tj= - 40°C to 150°C
375
400
425
V
BV(ECR)
Emitter Collector Break-down
Voltage
IEC = 75 mA, VGE = 0,
Tj= - 40°C to 150°C
18
V
BVGE
Gate Emitter Break-down
Voltage
IG = ± 2 mA
Tj= - 40°C to 150°C
12
16
V
ICES
Collector cut-off Current
(VGE = 0)
VCE = 15 V, VGE =0 ,Tj =150 °C
10
µA
VCE =200 V, VGE=0 ,TC =150°C
100
µA
IGES
Gate-Emitter Leakage
Current (VCE = 0)
VGE = ± 10V , VCE = 0
± 700
µA
RGE
Gate Emitter Resistance
20
K
Ω
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gate Threshold Voltage
VCE = VGE, IC = 250µA,
Tj= - 40°C to 150°C
0.6
2.4
V
VCE(SAT)
Collector-Emitter Saturation
Voltage
VGE =4.5V, IC = 10 A, Tj= 25°C
1.2
1.8
V
VGE =4.5V, IC = 10 A, Tc= -40°C
1.3
V
IC
Collector Current
VGE = 4.5V, VCE = 9 V
20
A
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward Transconductance
VCE = 15 V , IC =20 A
18
S
Cies
Input Capacitance
VCE = 25V, f = 1 MHz, VGE = 0
1250
pF
Coes
Output Capacitance
103
pF
Cres
Reverse Transfer
Capacitance
18
pF
Qg
Gate Charge
VCE = 320V, IC = 10 A,
VGE = 5V
28
nC



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