STGP10NB37LZ datasheet(1/9 Pages) STMICROELECTRONICS

部件名	STGP10NB37LZ

功能描述	N-CHANNEL CLAMPED 20A - TO-220 INTERNALLY CLAMPED PowerMesh™ IGBT

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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November 2000

STGP10NB37LZ

N-CHANNEL CLAMPED 20A - TO-220

INTERNALLY CLAMPED PowerMesh™ IGBT

s

POLYSILICON GATE VOLTAGE DRIVEN

s

LOW THRESHOLD VOLTAGE

s

LOW ON-VOLTAGE DROP

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

HIGH VOLTAGE CLAMPING FEATURE

DESCRIPTION

Using the latest high voltage technology based on a

patented strip layout, STMicroelectronics has

designed an advanced family of IGBTs, the

PowerMESH™ IGBTs, with outstanding

performances. The built in collector-gate zener

exhibits a very precise active clamping while the

gate-emitter zener supplies an ESD protection.

APPLICATIONS

s

AUTOMOTIVE IGNITION

ABSOLUTE MAXIMUM RATINGS

TYPE

VCES

VCE(sat)

IC

STGP10NB37LZ

CLAMPED

< 1.8 V

20 A

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS = 0)

CLAMPED

V

VECR

Reverse Battery Protection

18

V

VGE

Gate-Emitter Voltage

CLAMPED

V

IC

Collector Current (continuos) at TC = 100°C

20

A

ICM

Collector Current (pulse width < 100

µs)

60

A

PTOT

Total Dissipation at TC = 25°C

125

W

Derating Factor

0.83

W/°C

ESD

ESD (Human Body Model)

4

KV

Tstg

Storage Temperature

–65 to 175

°C

Tj

Max. Operating Junction Temperature

175

°C

TO-220

1

2

3

INTERNAL SCHEMATIC DIAGRAM

类似零件编号 - STGP10NB37LZ

制造商	部件名	数据表	功能描述
STMicroelectronics	STGP10NB37LZ	751Kb / 15P	10 A - 410 V internally clamped IGBT 06-Nov-2009

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类似说明 - STGP10NB37LZ

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