STGP3NB60HD

STGP3NB60HDFP

N-CHANNEL 3A - 600V TO-220/FP

PowerMESH

™ IGBT

s

HIGH INPUT IMPEDANCE

(VOLTAGE DRIVEN)

s

s

LOW GATE CHARGE

s

HIGH CURRENT CAPABILITY

s

VERY HIGH FREQUENCY OPERATION

s

OFF LOSSES INCLUDE TAIL CURRENT

s

CO-PACKAGED WITH TURBOSWITCH

™

ANTIPARALLEL DIODE

DESCRIPTION

Using the latest high voltage technology based

on a patented strip layout, STMicroelectronics

has designed an advanced family of IGBTs, the

PowerMESH

™

IGBTs,

with

outstanding

perfomances. The suffix ”H” identifies a family

optimized to achieve very low switching times for

high frequency applications (<120kHz).

APPLICATIONS

s

HIGH FREQUENCY MOTOR CONTROLS

s

SMPS AND PFC IN BOTH HARD SWITCH

AND RESONANT TOPOLOGIES

®

INTERNAL SCHEMATIC DIAGRAM

TYPE

STGP3NB60HD

STGP3NB60HDFP

600 V

600 V

<2. 8 V

<2. 8 V

3A

3A

June 1999

1

2

3

TO-220

TO-220FP

1

2

3

ABSOLUTE MAXIMUM RATINGS

Symbol

Parameter

Value

Unit

STG P7NB60HD

STGP7NB60HDF P

Collector-Emitter Voltage (VGS = 0)

600

600

V

G ate-Emitter Voltage

± 20

± 20

V

Collector Current (continuous) at Tc = 25

6

A

Collector Current (continuous) at Tc = 100

3

A

•)

Collector Current (pulsed)

24

24

A

T otal Dissipation at T c = 25

35

W

Derating Factor

0.56

0.28

W /

Storage T emperature

-65 t o 150

Max. O perat ing Junct ion T emperature

150

(

•) Pulse width limited by max. junction temperature

1/9