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STGP3NB60HD 数据表(PDF) 2 Page - STMicroelectronics

部件名 STGP3NB60HD
功能描述  N-CHANNEL 3A - 600V TO-220/FP PowerMESH IGBT
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STGP3NB60HD 数据表(HTML) 2 Page - STMicroelectronics

  STGP3NB60HD Datasheet HTML 1Page - STMicroelectronics STGP3NB60HD Datasheet HTML 2Page - STMicroelectronics STGP3NB60HD Datasheet HTML 3Page - STMicroelectronics STGP3NB60HD Datasheet HTML 4Page - STMicroelectronics STGP3NB60HD Datasheet HTML 5Page - STMicroelectronics STGP3NB60HD Datasheet HTML 6Page - STMicroelectronics STGP3NB60HD Datasheet HTML 7Page - STMicroelectronics STGP3NB60HD Datasheet HTML 8Page - STMicroelectronics STGP3NB60HD Datasheet HTML 9Page - STMicroelectronics  
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THERMAL DATA
TO-220
T O-220FP
Rthj-case
Thermal Resistance Junction-case
Max
1.78
3.57
oC/W
Rthj-amb
Rthc-sink
Thermal Resistance Junction-ambient
Max
Thermal Resistance Case-sink
T yp
62.5
0.5
oC/W
oC/W
ELECTRICAL CHARACTERISTICS (Tj =25
oC unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VBR(CES)
Collector-Emitt er
Breakdown Voltage
IC =250
µAVGE = 0
600
V
ICES
Collector cut-of f
(VGE =0)
VCE =Max Rating
Tj =25
oC
VCE =Max Rating
Tj =125
oC
100
1000
µA
µA
IGES
Gat e-Emitter Leakage
Current (VCE =0)
VGE =
± 20 V
VCE =0
± 100
nA
ON (
∗)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
VGE(th)
Gat e Threshold
Voltage
VCE =VGE
IC = 250
µA3
5
V
VCE(SAT )
Collector-Emitt er
Sat uration Voltage
VGE =15 V
IC =3 A
VGE =15 V
IC =3 A
Tj =125
oC
2.4
1.9
2. 8
V
V
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
gfs
Forward
Transconductance
VCE =25 V
IC =3 A
1. 3
2.4
S
Cies
Coes
Cres
Input Capacitance
Out put Capacitance
Reverse Transfer
Capacitance
VCE = 25V
f = 1MHz
VGE = 0
160
23
4. 5
235
33
6.6
300
43
8. 6
pF
pF
pF
QG
QGE
QGC
Tot al G ate Charge
Gat e-Emitter Charge
Gat e-Collector Charge
VCE = 480 V
IC =3 A
VGE =15 V
21
6
7.6
27
nC
nC
nC
ICL
Lat ching Current
Vclamp =480 V
RG=10
Ω
Tj = 150
oC
12
A
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
tr
Delay Time
Rise Time
VCC = 480 V
IC =3 A
VGE=15 V
RG =10
Ω
16
30
ns
ns
(di/dt)on
Eon(r)
Turn-on Current Slope
Turn-on
Switching Losses
VCC =480 V
I C =3 A
RG =10
Ω
VGE =15 V
Tj =125
oC
400
77
A/
µs
µJ
STGP3NB60HD/FP
2/9



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