STGD3NB60K datasheet(2/11 Pages) STMICROELECTRONICS

2 / 11 page

STGP3NB60K - STGD3NB60K

2/11

ABSOLUTE MAXIMUM RATINGS

( ) Pulse width limited by safe operating area

THERMAL DATA

ELECTRICAL CHARACTERISTICS (TCASE = 25 °C UNLESS OTHERWISE SPECIFIED)

MAIN PARAMETERS

Symbol

Parameter

Value

Unit

VCES

Collector-Emitter Voltage (VGS =0)

600

VECR

Emitter-Collector Voltage

VGE

Gate-Emitter Voltage

±20

Collector Current (continuous) at TC =25°C(#)

Collector Current (continuous) at TC =100°C(#)

ICM ( )

Collector Current (pulsed)

PTOT

Total Dissipation at TC =25°C

Derating Factor

0.4

W/°C

Tstg

Storage Temperature

– 55 to 150

°C

Max. Operating Junction Temperature

150

°C

TO-220

DPAK

Rthj-case

Thermal Resistance Junction-case Max

2.5

°C/W

Rthj-amb

Thermal Resistance Junction-ambient Max

62.5

100

°C/W

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

VBR(CES)

Collector-Emitter Breakdown

Voltage

IC = 250 µA, VGE = 0

600

ICES

Collector cut-off

(VGE =0)

VCE =Max Rating,TC =25 °C

VCE =Max Rating,TC = 125 °C

500

µA

IGES

Gate-Emitter Leakage

Current (VCE =0)

VGE =±20V,VCE =0

±100

VGE(th)

Gate Threshold Voltage

VCE =VGE,IC = 250µA

VCE(sat)

Collector-Emitter Saturation

Voltage

VGE =15V, IC =3 A

VGE =15V, IC = 3 A, Tj =125°C

2.3

1.9

2.8

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