STGD3NB60K datasheet(3/11 Pages) STMICROELECTRONICS

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STGP3NB60K - STGD3NB60K

SWITCHING PARAMETERS

Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.

2. Pulse width limited by max. junction temperature.

(**)Losses include Also the Tail (Jedec Standardization)

(#) Calculated according to the iterative formula:

Symbol

Parameter

Test Conditions

Min.

Typ.

Max.

Unit

gfs

Forward Transconductance

VCE =25V,Ic= 3A

2.4

Cies

Coes

Cres

Input Capacitance

Output Capacitance

Reverse Transfer

Capacitance

VCE =25V,f= 1MHz,VGE = 0

220

5.8

Qge

Qgc

Total Gate Charge

Gate-Emitter Charge

Gate-Collector Charge

VCE = 480V, IC =3A,

VGE = 15V

3.3

7.5

tscw

Short Circuit Withstand Time

Vce =0.5 VBR(CES),VGE=15V,

Tj = 125°C, RG =10 Ω

µs

td(on)

Turn-on Delay Time

Rise Time

VCC = 480 V, IC =3 A

RG =10Ω,VGE =15 V

(di/dt)on

Eon

Turn-on Current Slope

Turn-on Switching Losses

VCC= 480 V, IC =3 ARG=10Ω

VGE =15 V,Tj=125°C

520

A/µs

µJ

tr(Voff)

td(off)

Eoff(**)

Ets

Cross-over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

Total Switching Loss

Vcc =480 V, IC =3 A,

RGE =10 Ω ,VGE =15 V

Tj = 25 °C

100

µJ

tr(Voff)

td(off)

Eoff(**)

Ets

Cross-over Time

Off Voltage Rise Time

Delay Time

Fall Time

Turn-off Switching Loss

Total Switching Loss

Vcc =480 V, IC =3 A,

RGE =10 Ω ,VGE =15 V

Tj = 125 °C

190

130

111

195

µJ

C TC

()

JMAX

–

THJ

–

CES AT MAX

() TC IC

()

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