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M41ST85W 数据表(PDF) 31 Page - STMicroelectronics |
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M41ST85W 数据表(HTML) 31 Page - STMicroelectronics |
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31 / 41 page ![]() M41ST85W DC and AC parameters 31/41 Table 11. DC characteristics Sym Parameter Test condition(1) 1. Valid for Ambient Operating Temperature: TA = –40 to 85°C; VCC = 2.7 to 3.6V (except where noted). M41ST85W Unit Min Typ Max IBAT (2) 2. Measured with VOUT and ECON open. Battery current OSC ON TA = 25°C, VCC = 0V, VBAT = 3V 400 500 nA Battery current OSC OFF 50 nA ICC1 Supply current f = 400kHz 0.75 mA ICC2 Supply current (standby) SCL, SDA = VCC – 0.3V or VSS + 0.3V 0.50 mA ILI (3) 3. RSTIN1 and RSTIN2 internally pulled-up to VCC through 100KΩ resistor. WDI internally pulled-down to VSS through 100K Ω resistor. Input leakage current 0V ≤ VIN ≤ VCC ±1 µA Input leakage current (PFI) –25 2 25 nA ILO (4) 4. Outputs Deselected. Output leakage current 0V ≤ VIN ≤ VCC ±1 µA IOUT1 (5) 5. External SRAM must match RTC SUPERVISOR chip VCC specification. VOUT current (active) VOUT1 > VCC – 0.3V 100 mA IOUT2 VOUT current (battery back-up) VOUT2 > VBAT – 0.3V 100 µA VIH Input high voltage 0.7VCC VCC + 0.3 V VIL Input low voltage –0.3 0.3VCC V VBAT Battery voltage 2.5 3.0 3.5(6) 6. For rechargeable back-up, VBAT (max) may be considered VCC. V VOH Output high voltage(7) 7. For PFO and SQW pins (CMOS). IOH = –1.0mA 2.4 V Pull-up supply voltage (open drain) RST, IRQ/FT/OUT 3.6 V VOHB (8) 8. Conditioned output (ECON) can only sustain CMOS leakage current in the battery back-up mode. Higher leakage currents will reduce battery life. VOH (battery back-up) IOUT2 = –1.0µA 2.5 2.9 3.5 V VOL Output low voltage IOL = 3.0mA 0.4 V Output low voltage (open drain)(9) 9. For IRQ/FT/OUT, RST pins (Open Drain): if pulled-up to supply other than VCC, this supply must be equal to, or less than 3.0V when VCC = 0V (during battery back-up mode). IOL = 10mA 0.4 V VPFD Power fail deselect 2.55 2.60 2.70 V VPFI PFI input threshold VCC = 3V(W) 1.225 1.250 1.275 V PFI hysteresis PFI Rising 20 70 mV VSO Battery back-up switchover 2.5 V |
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