STTH806DIRG datasheet(2/9 Pages) STMICROELECTRONICS

2 / 9 page

Characteristics

STTH806

2/9

Characteristics

To evaluate the conduction losses use the following equation:

P = 1.07 x IF(AV) + 0.041 IF

(RMS)

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-220AC, D2PAK

2.5

° C/W

TO-220AC Ins

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 150° C

200

(2)

Forward voltage drop

Tj = 25° C

IF = 8 A

1.85

Tj = 150° C

1.10

1.40

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Min.

Typ

Max.

Unit

trr

Reverse recovery time

IF = 0.5 A, Irr = 0.25 A, IR = 1 A,

Tj = 25° C

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25° C

IRM

Reverse recovery current

IF = 8 A, dIF/dt = -100 A/µs,

VR = 400 V, Tj = 25° C

4.5

6.5

tfr

Forward recovery time

IF = 8 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

200

VFP

Forward recovery voltage

IF = 8 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25° C

3.5

STTH806DIRG 数据表(PDF) 2 Page - STMicroelectronics

STTH806DIRG 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表下载

链接网址

STTH806DIRG 数据表(PDF) 2 Page - STMicroelectronics

STTH806DIRG 数据表(HTML) 2 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9

数据表 下载

链接网址

数据表下载