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STTH806DIRG 数据表(PDF) 3 Page - STMicroelectronics

部件名 STTH806DIRG
功能描述  Turbo 2 ultrafast - high voltage rectifier
PDF  9 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STTH806DIRG 数据表(HTML) 3 Page - STMicroelectronics

  STTH806DIRG Datasheet HTML 1Page - STMicroelectronics STTH806DIRG Datasheet HTML 2Page - STMicroelectronics STTH806DIRG Datasheet HTML 3Page - STMicroelectronics STTH806DIRG Datasheet HTML 4Page - STMicroelectronics STTH806DIRG Datasheet HTML 5Page - STMicroelectronics STTH806DIRG Datasheet HTML 6Page - STMicroelectronics STTH806DIRG Datasheet HTML 7Page - STMicroelectronics STTH806DIRG Datasheet HTML 8Page - STMicroelectronics STTH806DIRG Datasheet HTML 9Page - STMicroelectronics  
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STTH806
Characteristics
3/9
Figure 1.
Conduction losses versus
average current
Figure 2.
Forward voltage drop versus
forward current
0.0
2.5
5.0
7.5
10.0
12.5
15.0
01
23
45
6
7
89
10
P
(W)
F(AV)
I
(A)
F(AV)
T
δ=tp/T
tp
δ = 0.05 δ = 0.1
δ = 0.2
δ = 1
δ = 0.5
0
10
20
30
40
50
60
70
80
90
100
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
I
(A)
FM
V
(V)
FM
T =25°C
(maximum values)
j
T =150°C
(maximum values)
j
T =150°C
(typical values)
j
Figure 3.
Relative variation of thermal
impedance junction to case versus
pulse duration
Figure 4.
Peak reverse recovery current
versus dIF/dt (typical values)
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03
1.E-02
1.E-01
1.E+00
Z/R
th(j-c)
th(j-c)
t (s)
p
Single pulse
0
2
4
6
8
10
12
14
0
50
100
150
200
250
300
350
400
450
500
I
(A)
RM
dI /dt(A/µs)
F
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
I =0.25 x I
F
F(AV)
V =400V
T =125°C
R
j
Figure 5.
Reverse recovery time versus
dIF/dt (typical values)
Figure 6.
Reverse recovery charges versus
dIF/dt (typical values)
0
50
100
150
200
250
300
0
50
100
150
200
250
300
350
400
450
500
t (ns)
rr
dI /dt(A/µs)
F
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125°C
R
j
50
100
150
200
250
300
350
400
450
0
50
100
150
200
250
300
350
400
450
500
Q (nC)
rr
I =2 x I
F
F(AV)
I=I
F
F(AV)
I =0.5 x I
F
F(AV)
V =400V
T =125°C
R
j
dI /dt(A/µs)
F



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