STTH6002C datasheet(2/9 Pages) STMICROELECTRONICS

部件名	STTH6002C

功能描述	High efficiency ultrafast diode

PDF	9 Pages

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制造商	STMICROELECTRONICS [STMicroelectronics]

网页	http://www.st.com

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Characteristics

STTH6002C

2/9

Characteristics

When the two diodes 1 and 2 are used simultaneously:

∆Tj(diode 1) = P (diode 1) X Rth(j-c) (Per diode) + P (diode 2) x Rth(c)

Table 1.

Absolute ratings (limiting values at Tj = 25° C, unless otherwise specified)

Symbol

Parameter

Value

Unit

VRRM

Repetitive peak reverse voltage

200

IF(RMS)

RMS forward current

IF(AV)

Average forward current,

δ = 0.5

TO-247

Per diode Tc = 140° C

Per device Tc = 125° C

TOP3I

Per diode Tc = 120° C

Per device Tc = 105° C

IFSM

Surge non repetitive forward current

tp = 10 ms Sinusoidal

330

Tstg

Storage temperature range

-65 to +175

° C

Maximum operating junction temperature

175

° C

Table 2.

Thermal parameters

Symbol

Parameter

Value

Unit

Rth(j-c)

Junction to case

TO-247

Per diode

1.2

° C/W

Total

0.8

TOP3I

Per diode

1.8

Total

1.20

Rth(c)

Coupling

TO-247

0.4

TOP3I

0.6

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