STTH6002C datasheet(3/9 Pages) STMICROELECTRONICS

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STTH6002C

Characteristics

3/9

To evaluate the conduction losses use the following equation:

P = 0.69 x IF(AV) + 0.005 IF

(RMS)

Table 3.

Static electrical characteristics

Symbol

Parameter

Test conditions

Typ

Max.

Unit

(1)

Reverse leakage current

Tj = 25° C

VR = VRRM

µA

Tj = 125° C

300

(2)

Forward voltage drop

Tj = 25° C

IF = 30 A

1.05

IF = 60 A

1.18

Tj = 150° C

IF = 30 A

0.75

0.84

IF = 60 A

0.9

0.99

Pulse test: tp = 5 ms, δ < 2 %

Pulse test: tp = 380 µs, δ < 2 %

Table 4.

Dynamic characteristics

Symbol

Parameter

Test conditions

Typ

Max.

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = 200 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 30 A, dIF/dt = 200 A/µs,

VR = 160 V, Tj = 125 °C

7.6

9.5

tfr

Forward recovery time

IF = 30 A, dIF/dt = 200 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

220

VFP

Forward recovery voltage

IF = 30 A, dIF/dt = 200 A/µs,

Tj = 25 °C

2.5

Figure 1.

Peak current versus duty cycle

(per diode)

Figure 2.

Forward voltage drop versus

forward current (per diode)

100

120

140

160

180

200

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

M(A)

d=tp/T

δ=tp/T

P = 10 W

P = 5 W

P = 20 W

100

150

200

250

300

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

FM(A)

j=25°C

(max values)

j=150°C

(max values)

j=150°C

(typ values)

VFM(V)

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