STTH3R04Q datasheet(3/10 Pages) STMICROELECTRONICS

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STTH3R04

Characteristics

3/10

Table 5.

Dynamic characteristics (Tj = 25 °C unless otherwise stated)

Symbol

Parameter

Test conditions

Min

Typ

Max

Unit

trr

Reverse recovery time

IF = 1 A, dIF/dt = -50 A/µs,

VR = 30 V, Tj = 25 °C

IF = 1 A, dIF/dt = -100 A/µs,

VR = 30 V, Tj = 25 °C

IRM

Reverse recovery current

IF = 3.0 A, dIF/dt = -200 A/µs,

VR = 320 V, Tj = 125 °C

45.5

tfr

Forward recovery time

IF = 3.0 A

dIF/dt = 100 A/µs

VFR = 1.1 x VFmax, Tj = 25 °C

VFP

Forward recovery voltage

IF = 3.0 A

dIF/dt = 100 A/µs

2.5

Figure 1.

Conduction losses versus

average forward current

Figure 2.

Forward voltage drop versus

forward current

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

4.5

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

4.0

P(W)

δ=0.05

δ=0.1

δ=0.2

δ=0.5

δ=1

δ=tp/T

IF(AV)(A)

0.0

0.4

0.8

1.2

1.6

2.0

2.4

2.8

3.2

FM(A)

J=150°C

(Maximum values)

J=150°C

(Maximum values)

J=150°C

(Typical values)

J=150°C

(Typical values)

J=25°C

(Maximum values)

J=25°C

(Maximum values)

VFM(V)

Figure 3.

Relative variation of thermal

impedance junction to lead versus

pulse duration, DO-15 (epoxy FR4,

copper thickness = 35 µm)

Figure 4.

Relative variation of thermal

impedance junction to ambient

versus pulse duration, DO-201AD

(epoxy FR4, copper

thickness = 35 µm)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-l)/Rth(j-l)

Single pulse

DO-15

Lleads=10mm

tP(s)

0.0

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.E-01

1.E+00

1.E+01

1.E+02

1.E+03

th(j-a)/Rth(j-a)

Single pulse

DO-201AD

Lleads=10mm

tP(s)

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