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PRELIMINARY DATA

August 2001

STL35NF10

N-CHANNEL 100V - 0.025

Ω - 35A PowerFLAT™

LOW GATE CHARGE STripFET™ MOSFET

s

s

IMPROVED DIE-TO-FOOTPRINT RATIO

s

VERY LOW PROFILE PACKAGE

DESCRIPTION

This Power MOSFET is the second generation of

STMicroelectronics unique “STripFET™” technolo-

gy. The resulting transistor shows extremely low on-

resistance and minimal gate charge. The new Pow-

erFLAT™ package allows a significant reduction in

board space without compromising performance.

APPLICATIONS

s

HIGH EFFICIENCY ISOLATED DC/DC

CONVETERS

ABSOLUTE MAXIMUM RATINGS

TYPE

STL35NF10

100 V

< 0.030

Ω

35 A

Symbol

Parameter

Value

Unit

100

V

100

V

Gate- source Voltage

± 20

V

35

22

A

A

Drain Current (pulsed)

140

A

80

W

Derating Factor

0.64

W/°C

Single Pulse Avalanche Energy

135

mJ

Storage Temperature

–65 to 150

°C

Max. Operating Junction Temperature

–55 to 150

°C

PowerFLAT™(6x5)

(Chip Scale Package)

INTERNAL SCHEMATIC DIAGRAM