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STL35NF10 数据表(PDF) 3 Page - STMicroelectronics

部件名 STL35NF10
功能描述  N-CHANNEL 100V - 0.025ohm - 35A PowerFLAT™ LOW GATE CHARGE STripFET™ MOSFET
PDF  6 Pages
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制造商  STMICROELECTRONICS [STMicroelectronics]
网页  http://www.st.com
标志 STMICROELECTRONICS - STMicroelectronics

STL35NF10 数据表(HTML) 3 Page - STMicroelectronics

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STL35NF10
ELECTRICAL CHARACTERISTICS (CONTINUED)
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(on)
Turn-on Delay Time
VDD = 50 V, ID = 17.5 A
RG = 4.7Ω VGS = 10V
(see test circuit, Figure 1)
28
ns
tr
Rise Time
63
ns
Qg
Qgs
Qgd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
VDD = 80 V, ID = 35 A,
VGS = 10 V
(see test circuit, Figure 2)
60
10
23
80
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
td(off)
tf
Turn-off-Delay Time
Fall Time
VDD = 50 V, ID = 17.5 A,
RG =4.7Ω, VGS = 10 V
(see test circuit, Figure 1)
84
28
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ISD
Source-drain Current
35
A
ISDM (1)
Source-drain Current (pulsed)
140
A
VSD (2)
Forward On Voltage
ISD = 18 A, VGS = 0
1.2
V
trr
Qrr
IRRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
ISD = 35 A, di/dt = 100A/µs,
VDD = 25 V, Tj = 150°C
(see test circuit, Figure 3)
114
456
8
ns
nC
A



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