TSH80 datasheet(6/24 Pages) STMICROELECTRONICS

6 / 24 page

Electrical characteristics

TSH80-TSH81-TSH82

6/24

Table 4.

VCC

+ = +5V, V

- = -5V, V

ic = GND, Tamb = 25

°C (unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

|Vio|

Input offset voltage

Tamb= 25°C

Tmin < Tamb < Tmax

0.8

ΔVio

Input offset voltage drift vs.

temperature

Tmin < Tamb < Tmax

μV/°C

Iio

Input offset current

Tamb= 25°C

Tmin < Tamb < Tmax

0.1

3.5

μA

Iib

Input bias current

Tamb= 25°C

Tmin < Tamb < Tmax

615

μA

Cin

Input capacitance

0.7

ICC

Supply current per operator

Tamb= 25°C

Tmin < Tamb < Tmax

9.8

12.3

13.4

CMR

Common mode rejection ratio

(

δVic/δVio)

-4.9 < Vic < 3.9V and Vout=GND

Tamb= 25°C

Tmin < Tamb < Tmax

106

SVR

Supply voltage rejection ratio

(

δVCC/δVio)

Tamb= 25°C

Tmin < Tamb < Tmax

PSR

Power supply rejection ratio

(

δVCC/δVout)

Positive & negative rail

Avd

Large signal voltage gain

RL=150Ω connected to GND

Vout= -4 to +4

Tamb= 25°C

Tmin < Tamb < Tmax

|Source|

Vid=+1, Vout connected to 1.5V

Tamb= 25°C

Tmin < Tamb < Tmax

Sink

Vid=-1, Vout connected to 1.5V

Tamb= 25°C

Tmin < Tamb < Tmax

Voh

High level output voltage

Tamb= 25°C

RL = 150Ω connected to GND

RL = 600Ω connected to GND

RL = 2kΩ connected to GND

RL = 10kΩ connected to GND

Tmin < Tamb < Tmax

RL = 150Ω connected to GND

4.2

4.1

4.36

4.85

4.9

4.93

Vol

Low level output voltage

Tamb= 25°C

RL = 150Ω connected to GND

RL = 600Ω connected to GND

RL = 2kΩ connected to GND

RL = 10kΩ connected to GND

Tmin < Tamb < Tmax

RL = 150Ω connected to GND

-4.63

-4.86

-4.9

-4.93

-4.4

-4.3

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