TSH80 datasheet(4/24 Pages) STMICROELECTRONICS

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Electrical characteristics

TSH80-TSH81-TSH82

4/24

Electrical characteristics

Table 3.

VCC

+ = +5V, V

- = GND, V

ic = 2.5V, Tamb = 25

°C (unless otherwise specified)

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

|Vio|

Input offset voltage

Tamb= 25°C

Tmin < Tamb < Tmax

1.1

ΔVio

Input offset voltage drift vs.

temperature

Tmin < Tamb < Tmax

μV/°C

Iio

Input offset current

Tamb= 25°C

Tmin < Tamb < Tmax

0.1

3.5

μA

Iib

Input bias current

Tamb= 25°C

Tmin < Tamb < Tmax

615

μA

Cin

Input capacitance

0.3

ICC

Supply current per operator

Tamb= 25°C

Tmin < Tamb < Tmax

8.2

10.5

11.5

CMR

Common mode rejection ratio

(

δVic/δVio)

+0.1<Vic<3.9V and Vout=2.5V

Tamb= 25°C

Tmin < Tamb < Tmax

SVR

Supply voltage rejection ratio

(

δVCC/δVio)

Tamb= 25°C

Tmin < Tamb < Tmax

PSR

Power supply rejection ratio

(

δVCC/δVout)

Positive & negative rail

Avd

Large signal voltage gain

RL=150Ω connected to 1.5V

and Vout=1V to 4V

Tamb= 25°C

Tmin < Tamb < Tmax

|Source|

Vid=+1, Vout connected to 1.5V

Tamb= 25°C

Tmin < Tamb < Tmax

Sink

Vid=-1, Vout connected to 1.5V

Tamb= 25°C

Tmin < Tamb < Tmax

Voh

High level output voltage

Tamb= 25°C

RL = 150Ω connected to GND

RL = 600Ω connected to GND

RL = 2kΩ connected to GND

RL = 10kΩ connected to GND

RL = 150Ω connected to 2.5V

RL = 600Ω connected to 2.5V

RL = 2kΩ connected to 2.5V

RL = 10kΩ connected to 2.5V

Tmin < Tamb < Tmax

RL = 150Ω connected to GND

RL = 150Ω connected to 2.5V

4.2

4.5

4.1

4.4

4.36

4.85

4.90

4.93

4.66

4.90

4.92

4.93

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