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STG5123 数据表(PDF) 1 Page - STMicroelectronics |
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STG5123 数据表(HTML) 1 Page - STMicroelectronics |
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1 / 18 page ![]() October 2007 Rev 1 1/18 18 STG5123 Low voltage 1 Ω single SPDT switch with break-before-make feature Features ■ High speed: –tPD = 130 ps (typ.) at VCC =3.0 V –tPD = 140 ps (typ.) at VCC =2.3 V ■ Ultra low power dissipation: –ICC = 0.2 µA (max.) at TA = 85 °C ■ Low ON resistance: –RON =1.0 Ω (Typ.) at VCC =4.5 V –RON =1.2 Ω (Typ.) at VCC =3.0 V –RON =2.0 Ω (Typ.) at VCC =1.8 V ■ Wide operating voltage range: –VCC (opr) = 1.65 to 4.5 V single supply ■ 5 V tolerant and 1.8 V compatible threshold on digital control input at VCC = 1.65 to 4.5 V ■ Latch-up performance exceeds 200 mA per JESD 78, Class II ■ ESD performance tested per JESD22 – 2000 V human-body model (A114-B, Class II) – 200 V machine model (A115-A) – 1000 V charged-device model (C101) Description The STG5123 is a high-speed CMOS low voltage single analog SPDT (single-pole dual-throw) switch or 2:1 multiplexer/demultiplexer switch fabricated using silicon gate C2MOS technology. Designed to operate from 1.65 to 4.5 V, this device is ideal for portable applications. The device offers very low ON resistance (1 Ω) at VCC = 4.5 V. The switch S1 is ON (connected to common ports Dn) when the SEL input is held high and OFF (state of high impedance state exists between the two ports) when SEL is held low. The switch S2 is ON (connected to common port D) when the SEL input is held low and OFF (state of high impedance state exists between the two ports) when SEL is held high. Additional key features are fast switching speed, break-before-make delay time and ultra low power consumption. All inputs and outputs are equipped with protection circuits against static discharge, giving them ESD and transient excess voltage immunity. DFN6L Table 1. Device summary Order code Package Packaging STG5123DTR DFN6L (1.2 x 1 mm) Tape and reel www.st.com |
类似零件编号 - STG5123 |
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类似说明 - STG5123 |
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